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| BFQ 19S NPN Silicon RF Transistor * For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA * CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFQ 19S Marking Ordering Code FGs Q62702-F1088 Pin Configuration 1=B 2=C 3=E Package SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 75 12 W 1 150 - 65 ... + 150 - 65 ... + 150 65 C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 85 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W Semiconductor Group 1 Dec-16-1996 BFQ 19S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V A 100 nA 100 A 10 40 220 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFQ 19S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4 5.5 1 0.4 4.4 - GHz pF 1.5 dB 2.5 4 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 9.5 4 dBm 35 11.5 7 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz Third order intercept point IP3 IC = 70 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Semiconductor Group 3 Dec-16-1996 BFQ 19S Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 TS 800 700 600 TA 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 2 RthJS K/W P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-16-1996 |
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